Authors
X.~Li, et al.
ABSTRACT
Silicon detectors have been widely used in high energy physics (HEP) experiments. The outstanding properties of silicon detectors include radiation hardness, small material budget, fine spatial resolution, high speed and low cost. Here we report initial results of using a single-bit Monolithic Active Pixel Sensor (MAPS), a leading candidate for the next generation trackers in high luminosity colliders, for hard X-ray imaging. The MAPS responses to X-ray with different energies are obtained and compared with simulation. The observed cluster sizes are larger than that predicted by the Continuous Slowing Down Approximation (CSDA) model, indicating that the charge diffusion process might play an important in the MAPS response to low energy electrons. This work paves the way towards multiple layer ultrafast silicon sensor applications in synchrotrons and XFEL beamlines.